Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method

Akira Nagaoka, Ryoji Katsube, Shigeru Nakatsuka, Kenji Yoshino, Tomoyasu Taniyama, Hideto Miyake, Koichi Kakimoto, Michael A. Scarpulla, Yoshitaro Nose

研究成果: ジャーナルへの寄稿記事

5 引用 (Scopus)

抄録

Abstract High-quality Cu2ZnSn(SxSe1-x)4 (CZTSxSe1-x) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSxSe1-x solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSxSe1-x single crystals were obtained from a 70-80 mol% CZTSxSe1-x solution at growth temperature 900°C and speed 4-5 mm/day. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×1017 and 3×1017 cm-3 while the mobility decreases from 35.1 to 10.4 cm2V-1 s-1. These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.

元の言語英語
記事番号22818
ページ(範囲)9-15
ページ数7
ジャーナルJournal of Crystal Growth
423
DOI
出版物ステータス出版済み - 8 1 2015

Fingerprint

heaters
Single crystals
Growth temperature
single crystals
Electron probe microanalysis
Sulfur
X ray powder diffraction
Carrier concentration
Raman spectroscopy
electron probes
microanalysis
Doping (additives)
Thin films
Defects
solutes
Crystals
sulfur
temperature
probes
defects

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Nagaoka, A., Katsube, R., Nakatsuka, S., Yoshino, K., Taniyama, T., Miyake, H., ... Nose, Y. (2015). Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method. Journal of Crystal Growth, 423, 9-15. [22818]. https://doi.org/10.1016/j.jcrysgro.2015.04.012

Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method. / Nagaoka, Akira; Katsube, Ryoji; Nakatsuka, Shigeru; Yoshino, Kenji; Taniyama, Tomoyasu; Miyake, Hideto; Kakimoto, Koichi; Scarpulla, Michael A.; Nose, Yoshitaro.

:: Journal of Crystal Growth, 巻 423, 22818, 01.08.2015, p. 9-15.

研究成果: ジャーナルへの寄稿記事

Nagaoka, A, Katsube, R, Nakatsuka, S, Yoshino, K, Taniyama, T, Miyake, H, Kakimoto, K, Scarpulla, MA & Nose, Y 2015, 'Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method', Journal of Crystal Growth, 巻. 423, 22818, pp. 9-15. https://doi.org/10.1016/j.jcrysgro.2015.04.012
Nagaoka, Akira ; Katsube, Ryoji ; Nakatsuka, Shigeru ; Yoshino, Kenji ; Taniyama, Tomoyasu ; Miyake, Hideto ; Kakimoto, Koichi ; Scarpulla, Michael A. ; Nose, Yoshitaro. / Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method. :: Journal of Crystal Growth. 2015 ; 巻 423. pp. 9-15.
@article{c57eb809fa774c17b12295822fb60e4c,
title = "Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method",
abstract = "Abstract High-quality Cu2ZnSn(SxSe1-x)4 (CZTSxSe1-x) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSxSe1-x solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSxSe1-x single crystals were obtained from a 70-80 mol{\%} CZTSxSe1-x solution at growth temperature 900°C and speed 4-5 mm/day. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×1017 and 3×1017 cm-3 while the mobility decreases from 35.1 to 10.4 cm2V-1 s-1. These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.",
author = "Akira Nagaoka and Ryoji Katsube and Shigeru Nakatsuka and Kenji Yoshino and Tomoyasu Taniyama and Hideto Miyake and Koichi Kakimoto and Scarpulla, {Michael A.} and Yoshitaro Nose",
year = "2015",
month = "8",
day = "1",
doi = "10.1016/j.jcrysgro.2015.04.012",
language = "English",
volume = "423",
pages = "9--15",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",

}

TY - JOUR

T1 - Growth and characterization of Cu2ZnSn(Sx Se1-x)4 single crystal grown by traveling heater method

AU - Nagaoka, Akira

AU - Katsube, Ryoji

AU - Nakatsuka, Shigeru

AU - Yoshino, Kenji

AU - Taniyama, Tomoyasu

AU - Miyake, Hideto

AU - Kakimoto, Koichi

AU - Scarpulla, Michael A.

AU - Nose, Yoshitaro

PY - 2015/8/1

Y1 - 2015/8/1

N2 - Abstract High-quality Cu2ZnSn(SxSe1-x)4 (CZTSxSe1-x) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSxSe1-x solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSxSe1-x single crystals were obtained from a 70-80 mol% CZTSxSe1-x solution at growth temperature 900°C and speed 4-5 mm/day. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×1017 and 3×1017 cm-3 while the mobility decreases from 35.1 to 10.4 cm2V-1 s-1. These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.

AB - Abstract High-quality Cu2ZnSn(SxSe1-x)4 (CZTSxSe1-x) single crystals were grown by the traveling heater method (THM), which is an example of a solution growth process. The CZTSxSe1-x solute-Sn solvent pseudobinary system was investigated and the ranges of growth temperature and quantity of solvent were determined for THM growth. The CZTSxSe1-x single crystals were obtained from a 70-80 mol% CZTSxSe1-x solution at growth temperature 900°C and speed 4-5 mm/day. The structural and compositional analyses of the grown single crystals were carried out by powder X-ray diffraction, Raman spectroscopy and electron probe microanalysis. The grown crystals were kesterite and nearly stoichiometric with slightly Cu-poor and Zn-rich despite the excess Sn used as the solvent. As the sulfur content x increases, the carrier concentration increases slightly but systematically between 2×1017 and 3×1017 cm-3 while the mobility decreases from 35.1 to 10.4 cm2V-1 s-1. These data provide references for the results of characterization on thin film samples as well as giving insight into the defect equilibrium and resulting quantities such as doping and mobility affecting device performance.

UR - http://www.scopus.com/inward/record.url?scp=84929174193&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84929174193&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2015.04.012

DO - 10.1016/j.jcrysgro.2015.04.012

M3 - Article

AN - SCOPUS:84929174193

VL - 423

SP - 9

EP - 15

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

M1 - 22818

ER -