Growth and characterization of thick GaN layers with high Fe doping

Y. Kumagai, H. Murakami, Yoshihiro Kangawa, A. Koukitu

研究成果: Contribution to journalArticle査読

5 被引用数 (Scopus)

抄録

Thick Fe-doped GaN layers were grown by metalorganic hydrogen chloride vapor phase epitaxy (MOHVPE). FeCl2 formed by the reaction between ferrocene (Cp2Fe) and HCl was introduced during GaN growth. Resistivity of the GaN layer increased with increasing Cp2Fe input partial pressure. A semi-insulating (SI)-GaN layer exhibiting room-temperature resistivity of 3.0 × 109 Ω cm was successfully prepared by compensating for the residual donors. The crystalline quality of the GaN layer was found to deteriorate with excess Fe doping. These results indicate that control of background donor impurities is critically important to grow high-quality SI-GaN layers. ° 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

本文言語英語
ページ(範囲)2058-2061
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
2
7
DOI
出版ステータス出版済み - 11 7 2005
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学

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