Growth and doping modeling of SiC-CVD in a horizontal hot-wall reactor

Modeling and simulation of the SiC epitaxial growth, and doping in a horizontal hot-wall reactor from common precursors (SiH₄; C ₃H₈ diluted in H₂ for growth; N₂ and Al(CH₃)₃ for n-type and p-type doping) are presented. The growth and doping features of SiC thin layers on both Si-terminated and C-terminated surfaces are analyzed as a function of various inlet source gas conditions, i.e., various C/Si ratios. The role of the actual surface mass fluxes of both Si-containing and C-containing species and their ratio is analyzed and compared to the inlet experimental parameters. It is demonstrated that the doping level resulting from lattice site competition effects can be quantified by the actual C/Si ratio calculated above the growing surface. Moreover, the surface morphology of the epitaxial layer is explained on the basis of the mass fluxes at the growing surface.