Growth and electronic transport properties of epitaxial graphene on SiC

H. Hibino, S. Tanabe, S. Mizuno, H. Kageshima, H. Hibino, S. Tanabe, S. Mizuno, H. Kageshima

    研究成果: Contribution to journalArticle査読

    35 被引用数 (Scopus)

    抄録

    With the aim of developing a single-crystal graphene substrate indispensable to graphene's practical applications, we are investigating the structural and physical properties of graphene epitaxially grown on SiC by thermal decomposition. We grow monolayer and bilayer graphene uniformly on a micrometre scale on the Si face of SiC in an Ar environment and in ultra-high vacuum, respectively. Epitaxial bilayer graphene, even if uniform in thickness, contains two types of domains with different stacking orders. We compare the transport properties of monolayer and bilayer graphene using top-gate Hall bar devices. Quantum Hall effects are observed in monolayer graphene and a band gap is electrically detected in bilayer graphene. The monolayer and bilayer graphene show quite different transport properties, reflecting their electronic structures.

    本文言語英語
    論文番号154008
    ジャーナルJournal of Physics D: Applied Physics
    45
    15
    DOI
    出版ステータス出版済み - 4 18 2012

    All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 凝縮系物理学
    • 音響学および超音波学
    • 表面、皮膜および薄膜

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