Growth and surface structure analysis of a new SiON single layer on SiC(0001)

Ryo Kohmatsu, Takeshi Nakagawa, Seigi Mizuno

    研究成果: Contribution to journalArticle査読

    2 被引用数 (Scopus)

    抄録

    A new silicon oxynitride layer was formed on a 6H-SiC(0001) surface by a nitrogen oxide treatment. The atomic structure of this single layer on the SiC(0001) substrate was determined by means of low-energy electron diffraction (LEED) analysis. The surface layer has a (3×3) R30° periodicity. Its LEED I(E) spectra are different from those of the previously reported silicon oxynitride layer which has a Si4O5N3 composition [Phys. Rev. Lett. 98 (2007) 136105]. The best-fit structure has a single layer of Si2ON3 composition terminated by O bridges. The Si-N layer of the determined structure has the same structure as that in the Si4O5N3 surface. The obtained Si2O3 structure would be useful for preparing an ideal SiC-insulator interfaces with a low interfacial density of states.

    本文言語英語
    ページ(範囲)148-152
    ページ数5
    ジャーナルSurface Science
    628
    DOI
    出版ステータス出版済み - 10 2014

    All Science Journal Classification (ASJC) codes

    • 凝縮系物理学
    • 表面および界面
    • 表面、皮膜および薄膜
    • 材料化学

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