Growth enhancement of radish sprouts induced by low pressure o 2 radio frequency discharge plasma irradiation

研究成果: Contribution to journalArticle査読

49 被引用数 (Scopus)

抄録

We studied growth enhancement of radish sprouts (Raphanus sativus L.) induced by low pressure O 2 radio frequency (RF) discharge plasma irradiation. The average length of radish sprouts cultivated for 7 days after O 2 plasma irradiation is 30-60% greater than that without irradiation. O 2 plasma irradiation does not affect seed germination. The experimental results reveal that oxygen related radicals strongly enhance growth, whereas ions and photons do not.

本文言語英語
論文番号01AE01
ジャーナルJapanese journal of applied physics
51
1 PART 2
DOI
出版ステータス出版済み - 1 2012

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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