Growth mechanism of YBCO films in metal organic deposition method using trifluoroacetates

Tetsuji Honjo, Yuichi Nakamura, Ryo Teranishi, Hiroshi Fuji, Junko Shibata, Teruo Izumi, Yuh Shiohara

研究成果: ジャーナルへの寄稿Conference article

50 引用 (Scopus)

抄録

We report the theoretical analysis of YBCO growth during post annealing in the TFA-MOD process considering both the diffusion in the boundary layer and the growth kinetics at the precursor/YBCO interface. As a result, we could obtain the analytical solution of the growth rate of YBCO. Subsequently, the unknown parameters in this solution were evaluated by the experimental measurements of the growth rate. The experimental results of the growth rate showed that it was independent of the film thickness and proportional to the square root of the water vapor pressure. These results suggested that the mass transfer in the gas boundary layer limited the growth rate. This model reveals a basic idea of the mechanism to determine the steady state growth rate, and could explain the experimental results. In addition, it predicts that the growth rate can be estimated from the water vapor pressure of the inlet gas. Consequently, it was confirmed that this growth model is effective for understanding of the growth kinetics in the TFA-MOD process.

元の言語英語
ページ(範囲)2516-2519
ページ数4
ジャーナルIEEE Transactions on Applied Superconductivity
13
発行部数2 III
DOI
出版物ステータス出版済み - 6 1 2003
外部発表Yes
イベント2002 Applied Superconductivity Conference - Houston, TX, 米国
継続期間: 8 4 20028 9 2002

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Trifluoroacetic Acid
Metals
metals
Growth kinetics
Steam
Vapor pressure
Water vapor
Boundary layers
Gases
water pressure
vapor pressure
water vapor
boundary layers
Film thickness
Mass transfer
Annealing
kinetics
gases
mass transfer
film thickness

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

Growth mechanism of YBCO films in metal organic deposition method using trifluoroacetates. / Honjo, Tetsuji; Nakamura, Yuichi; Teranishi, Ryo; Fuji, Hiroshi; Shibata, Junko; Izumi, Teruo; Shiohara, Yuh.

:: IEEE Transactions on Applied Superconductivity, 巻 13, 番号 2 III, 01.06.2003, p. 2516-2519.

研究成果: ジャーナルへの寄稿Conference article

Honjo, Tetsuji ; Nakamura, Yuichi ; Teranishi, Ryo ; Fuji, Hiroshi ; Shibata, Junko ; Izumi, Teruo ; Shiohara, Yuh. / Growth mechanism of YBCO films in metal organic deposition method using trifluoroacetates. :: IEEE Transactions on Applied Superconductivity. 2003 ; 巻 13, 番号 2 III. pp. 2516-2519.
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abstract = "We report the theoretical analysis of YBCO growth during post annealing in the TFA-MOD process considering both the diffusion in the boundary layer and the growth kinetics at the precursor/YBCO interface. As a result, we could obtain the analytical solution of the growth rate of YBCO. Subsequently, the unknown parameters in this solution were evaluated by the experimental measurements of the growth rate. The experimental results of the growth rate showed that it was independent of the film thickness and proportional to the square root of the water vapor pressure. These results suggested that the mass transfer in the gas boundary layer limited the growth rate. This model reveals a basic idea of the mechanism to determine the steady state growth rate, and could explain the experimental results. In addition, it predicts that the growth rate can be estimated from the water vapor pressure of the inlet gas. Consequently, it was confirmed that this growth model is effective for understanding of the growth kinetics in the TFA-MOD process.",
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AU - Honjo, Tetsuji

AU - Nakamura, Yuichi

AU - Teranishi, Ryo

AU - Fuji, Hiroshi

AU - Shibata, Junko

AU - Izumi, Teruo

AU - Shiohara, Yuh

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N2 - We report the theoretical analysis of YBCO growth during post annealing in the TFA-MOD process considering both the diffusion in the boundary layer and the growth kinetics at the precursor/YBCO interface. As a result, we could obtain the analytical solution of the growth rate of YBCO. Subsequently, the unknown parameters in this solution were evaluated by the experimental measurements of the growth rate. The experimental results of the growth rate showed that it was independent of the film thickness and proportional to the square root of the water vapor pressure. These results suggested that the mass transfer in the gas boundary layer limited the growth rate. This model reveals a basic idea of the mechanism to determine the steady state growth rate, and could explain the experimental results. In addition, it predicts that the growth rate can be estimated from the water vapor pressure of the inlet gas. Consequently, it was confirmed that this growth model is effective for understanding of the growth kinetics in the TFA-MOD process.

AB - We report the theoretical analysis of YBCO growth during post annealing in the TFA-MOD process considering both the diffusion in the boundary layer and the growth kinetics at the precursor/YBCO interface. As a result, we could obtain the analytical solution of the growth rate of YBCO. Subsequently, the unknown parameters in this solution were evaluated by the experimental measurements of the growth rate. The experimental results of the growth rate showed that it was independent of the film thickness and proportional to the square root of the water vapor pressure. These results suggested that the mass transfer in the gas boundary layer limited the growth rate. This model reveals a basic idea of the mechanism to determine the steady state growth rate, and could explain the experimental results. In addition, it predicts that the growth rate can be estimated from the water vapor pressure of the inlet gas. Consequently, it was confirmed that this growth model is effective for understanding of the growth kinetics in the TFA-MOD process.

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