Growth mechanism of ZnO deposited by nitrogen mediated crystallization

研究成果: ジャーナルへの寄稿記事

2 引用 (Scopus)

抄録

We investigate the growth mechanism of ZnO deposited by a nitrogen mediated crystallization (NMC) method. NMC is a method in which nitrogen is used to control nucleation via a nitrogen adsorption-desorption behavior. The growth of NMC-ZnO is classified into three stages, that is, the pre-nucleation stage, nucleation and grain growth stage for 4-30 nm in thickness, and coalescence stage for 31-100 nm in thickness. NMC-ZnO nucleation takes place in a very short period compared to that for conventional ZnO. Hence, NMC-ZnO has a uniform grain size distribution, flat surface with less spiky grains, and a longer lateral correlation length of the surface, leading to a larger grain size than in conventional ZnO. Utilizing this NMC-ZnO as a buffer layer, low resistive aluminum doped zinc oxide ZnO:Al (AZO) films are obtained at the buffer layer film thickness ranging from 4 to 30 nm. The lowest resistivity is 3.4 × 10-4Ωcm for 90 nm thick AZO deposited on NMC-ZnO buffer layers of 10 and 30 nm in thickness.

元の言語英語
記事番号036403
ジャーナルMaterials Research Express
1
発行部数3
DOI
出版物ステータス出版済み - 9 1 2014

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Crystallization
Nitrogen
Nucleation
Buffer layers
Zinc Oxide
Zinc oxide
Aluminum
Coalescence
Grain growth
Film thickness
Desorption
Adsorption

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

これを引用

Growth mechanism of ZnO deposited by nitrogen mediated crystallization. / Suhariadi, Iping; Shiratani, Masaharu; Itagaki, Naho.

:: Materials Research Express, 巻 1, 番号 3, 036403, 01.09.2014.

研究成果: ジャーナルへの寄稿記事

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abstract = "We investigate the growth mechanism of ZnO deposited by a nitrogen mediated crystallization (NMC) method. NMC is a method in which nitrogen is used to control nucleation via a nitrogen adsorption-desorption behavior. The growth of NMC-ZnO is classified into three stages, that is, the pre-nucleation stage, nucleation and grain growth stage for 4-30 nm in thickness, and coalescence stage for 31-100 nm in thickness. NMC-ZnO nucleation takes place in a very short period compared to that for conventional ZnO. Hence, NMC-ZnO has a uniform grain size distribution, flat surface with less spiky grains, and a longer lateral correlation length of the surface, leading to a larger grain size than in conventional ZnO. Utilizing this NMC-ZnO as a buffer layer, low resistive aluminum doped zinc oxide ZnO:Al (AZO) films are obtained at the buffer layer film thickness ranging from 4 to 30 nm. The lowest resistivity is 3.4 × 10-4Ωcm for 90 nm thick AZO deposited on NMC-ZnO buffer layers of 10 and 30 nm in thickness.",
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