A-axis-oriented YBa2Cu3Ox films are grown on lattice matched Gd2CuO4 buffer layers with a K2NiF4-type structure on (100) SrLaGaO4 substrates by pulsed laser deposition from the viewpoint of atomic graphoepitaxy. The preferred orientation and in-plane orientation are investigated in the films grown at various substrate temperatures. In-plane aligned a-axis-oriented YBa2Cu3Ox films are grown in a relatively wide temperature range by using a new Gd2CuO4 buffer layer. The bc-plane lattice matched K2NiF4 (100) substrate surfaces widen the growth conditions of in-plane aligned a-axis-oriented YBa2Cu3Ox films.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||出版済み - 1 1 1997|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)