We compared Jc properties of i) Pure ErBa2Cu 3O7-δ films on BaZrO3 buffered MgO substrates, ii) Pure ErBa2Cu3O7-δ films on SrTiO3 substrates, iii) BaSnO3 doped ErBa 2Cu3O7-δ ilms on SrTiO3 substrates, and iv) BaSnO3 doped ErBa2Cu3O 7-δ films on BaSnO3 buffered MgO substrates. The lowest Jc was obtained from pure ErBa2Cu3O 7-δ films on SrTiO3 substrates because of low dislocation densities, c-axis correlated pinning properties are obtained from pure ErBa2Cu3O7-δ films on BaSnO 3 buffered MgO substrates indicating there exist dislocations along the c-axis of the films. The highest Jc was obtained from BaSnO 3 doped ErBa2Cu3O7-δ films on SrTiO3 substrates. Almost the same Jc was obtained from BaSnO3 doped ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates. 2wt% BaSnO3 doping into ErBa2Cu3O7-δ films on BaSnO3 buffered MgO substrates are very effective to enhance J cs of the films at a high magnetic field.
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