Growth of cubic AlN films on sapphire(0001) with atomic scale surface smoothness by pulsed laser deposition

Tomohiro Yoshida, Tsuyoshi Yoshitake, Kazushi Sumitani, Ryota Ohtani, You Nakagawa, Satoshi Mohri, Kunihito Nagayama

    研究成果: Chapter in Book/Report/Conference proceedingConference contribution

    6 被引用数 (Scopus)

    抄録

    We have previously reported that β-AlN crystallites with diameters of 0.5-1 μm were occasionally grown on sapphire(0001) by pulsed laser deposition, which implied that the migration mobility of the species deposited on the substrate surface might be an insufficient for the film growth of β-AlN. In the present study, in order to enhance the crystal growth of β-AlN, sapphire(0001) substrates with an atomically smoothness (step-sapphire) were employed. The growth conditions of α- and β-AlN extended to higher nitrogen-pressures, as compared to those using normal surface sapphire(0001) substrates (normal-sapphire). This is due to the enhancement in the mobility of the deposited species on the substrate surface.

    本文言語英語
    ホスト出版物のタイトルTHERMEC 2009
    ページ2921-2926
    ページ数6
    DOI
    出版ステータス出版済み - 2 9 2010
    イベント6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009 - Berlin, ドイツ
    継続期間: 8 25 20098 29 2009

    出版物シリーズ

    名前Materials Science Forum
    638-642
    ISSN(印刷版)0255-5476

    その他

    その他6th International Conference on Processing and Manufacturing of Advanced Materials - THERMEC'2009
    Countryドイツ
    CityBerlin
    Period8/25/098/29/09

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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