Growth of metastable cubic AlN by reactive pulsed laser deposition

Satoshi Mohri, Tsuyoshi Yoshitake, Takeshi Hara, Kunihito Nagayama

    研究成果: ジャーナルへの寄稿学術誌査読

    20 被引用数 (Scopus)

    抄録

    Aluminum nitride (AlN) thin films were prepared on sapphire (0001) in ambient nitrogen by pulsed laser deposition using a sintered AlN target, and the film structure was evaluated by X-ray diffraction and scanning electron microscopy. 110-oriented hexagonal AlN (α-AlN) films were grown at a nitrogen pressure of 10 mTorr. On the other hand, at 40 mTorr the films' central area was partially studded with 111- and 100-oriented cubic AlN (β-AlN) crystallites with obvious facets. This area was located on the normal of the irradiation spot on the target, and it corresponded to the region on the film where the highly energetic and dense species were deposited. A nonequilibrium condition and large supply of nitrogen are both important factors for the growth of metastable β-AlN.

    本文言語英語
    ページ(範囲)1796-1799
    ページ数4
    ジャーナルDiamond and Related Materials
    17
    7-10
    DOI
    出版ステータス出版済み - 7月 2008

    !!!All Science Journal Classification (ASJC) codes

    • 電子材料、光学材料、および磁性材料
    • 化学 (全般)
    • 機械工学
    • 材料化学
    • 電子工学および電気工学

    フィンガープリント

    「Growth of metastable cubic AlN by reactive pulsed laser deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

    引用スタイル