Growth of MnGeP2 thin films by molecular beam epitaxy

Kazuyuki Minami, Jumpei Jogo, Valery Smirnov, Hideki Yuasa, Toshikazu Nagatsuka, Takayuki Ishibashi, Yoshitaka Morishita, Yuriko Matsuo, Yoshihiro Kangawa, Akinori Koukitu, Katsuaki Sato

研究成果: Contribution to journalArticle査読

4 被引用数 (Scopus)

抄録

Epitaxial growth of the Mn-containing novel ternary compound MnGeP 2 has been investigated. Prior to the growth experiments, theoretical studies using an ab initio calculation were carried out, on the basis of which the stable existence of MnGeP2: with a chalcopyrite structure was predicted. Growth experiments of Mn-Ge-P were performed on GaAs(001) and InP(001) substrates using a molecular beam epitaxy (MBE) technique, in which Mn and Ge were supplied from solid sources and P from a tertiary butyl phosphine (TBP) gas source. The optimum growth condition has been estimated on the basis of X-ray diffraction studies. Oriented overgrowth of MnGeP2 was confirmed from a reciprocal lattice mapping (RLM) on X-ray diffraction (XRD) analyses, and lattice constants have been determined to be a = 0.569 nm and c = 1.13 nm based on the assumption that the material has a tetragonal crystal structure,

本文言語英語
ページ(範囲)L265-L267
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
44
8-11
DOI
出版ステータス出版済み - 2005
外部発表はい

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(その他)
  • 物理学および天文学(全般)

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