Growth of multicrystalline Si ingots for solar cells using noncontact crucible method without touching the crucible wall

Kazuo Nakajima, Ryota Murai, Kohei Morishita, Kentaro Kutsukake, Noritaka Usami

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

Conventional crystal growth methods using crucibles cannot control the stress caused by expansion due to the solidification of the Si melt. We proposed a noncontact crucible method using a conventional crucible that reduces the stress in Si multicrystalline ingots. In this method, nucleation occurs on the surface of a Si melt using seed crystals, and crystals grow inside the Si melt without touching the crucible walls. Then, the ingots continue to grow while being slowly pulled upward to ensure that the crystal growth remains in the Si melt. A Si ingot with a diameter of 23 cm was obtained in a crucible with a diameter of 30 cm. The maximum solidification ratio in the growth was more than 80%. We have confirmed that such noncontact crucible growth was possible using a conventional crucible.

本文言語英語
ホスト出版物のタイトルProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
ページ1830-1832
ページ数3
DOI
出版ステータス出版済み - 11 26 2012
外部発表はい
イベント38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, 米国
継続期間: 6 3 20126 8 2012

出版物シリーズ

名前Conference Record of the IEEE Photovoltaic Specialists Conference
ISSN(印刷版)0160-8371

その他

その他38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country米国
CityAustin, TX
Period6/3/126/8/12

All Science Journal Classification (ASJC) codes

  • Control and Systems Engineering
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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