TY - JOUR
T1 - Growth of semiconductor silicon crystals
AU - Kakimoto, Koichi
AU - Gao, Bing
AU - Liu, Xin
AU - Nakano, Satoshi
N1 - Publisher Copyright:
© 2016 Elsevier Ltd
PY - 2016/6/1
Y1 - 2016/6/1
N2 - This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.
AB - This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.
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U2 - 10.1016/j.pcrysgrow.2016.04.014
DO - 10.1016/j.pcrysgrow.2016.04.014
M3 - Review article
AN - SCOPUS:84975105775
VL - 62
SP - 273
EP - 285
JO - Progress in Crystal Growth and Characterization of Materials
JF - Progress in Crystal Growth and Characterization of Materials
SN - 0960-8974
IS - 2
ER -