Growth of semiconductor silicon crystals

Koichi Kakimoto, Bing Gao, Xin Liu, Satoshi Nakano

研究成果: ジャーナルへの寄稿総説査読

11 被引用数 (Scopus)

抄録

This paper focuses on the recent developments in Czochralski (CZ) crystal growth of silicon for large-scale integrated circuits (LSIs) and multi-crystalline silicon growth using a directional solidification method for solar cells. Growth of silicon crystals by the CZ method currently allows the growth of high-quality crystals that satisfy the device requirements of LSIs or power devices for electric cars. This paper covers how to obtain high-quality crystals with low impurity content and few point defects. It also covers the directional solidification method, which yields crystals with medium conversion efficiency for photovoltaic applications. We discuss the defects and impurities that degrade the efficiency and the steps to overcome these problems.

本文言語英語
ページ(範囲)273-285
ページ数13
ジャーナルProgress in Crystal Growth and Characterization of Materials
62
2
DOI
出版ステータス出版済み - 6月 1 2016
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学

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