Growth of single domain GaAs/fluoride/Si structures

Kazuo Tsutsui, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

研究成果: ジャーナルへの寄稿記事

7 引用 (Scopus)

抄録

Single domain GaAs films were grown on the fluoride/Si(100) structures. Antiphase disorder in GaAs grown on CaF2/Si was suppressed by RTA process for planarization of facets on CaF2 surface and use of off-oriented Si substrates. Growth on the double-fluoride layer structure, (Ca,Sr)F2/CaF2, was also effective, where single domain GaAs layers were obtained without the RTA process.

元の言語英語
ページ(範囲)398-402
ページ数5
ジャーナルJournal of Crystal Growth
95
発行部数1-4
DOI
出版物ステータス出版済み - 2 2 1989

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Rapid thermal annealing
Fluorides
fluorides
flat surfaces
disorders
Substrates
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

これを引用

Tsutsui, K., Asano, T., Ishiwara, H., & Furukawa, S. (1989). Growth of single domain GaAs/fluoride/Si structures. Journal of Crystal Growth, 95(1-4), 398-402. https://doi.org/10.1016/0022-0248(89)90428-4

Growth of single domain GaAs/fluoride/Si structures. / Tsutsui, Kazuo; Asano, Tanemasa; Ishiwara, Hiroshi; Furukawa, Seijiro.

:: Journal of Crystal Growth, 巻 95, 番号 1-4, 02.02.1989, p. 398-402.

研究成果: ジャーナルへの寄稿記事

Tsutsui, K, Asano, T, Ishiwara, H & Furukawa, S 1989, 'Growth of single domain GaAs/fluoride/Si structures', Journal of Crystal Growth, 巻. 95, 番号 1-4, pp. 398-402. https://doi.org/10.1016/0022-0248(89)90428-4
Tsutsui, Kazuo ; Asano, Tanemasa ; Ishiwara, Hiroshi ; Furukawa, Seijiro. / Growth of single domain GaAs/fluoride/Si structures. :: Journal of Crystal Growth. 1989 ; 巻 95, 番号 1-4. pp. 398-402.
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