Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy

T. Yamane, H. Murakami, Y. Kangawa, Y. Kumagai, A. Koukitu

研究成果: ジャーナルへの寄稿記事

13 引用 (Scopus)

抄録

Growth of thick AlN layer was performed directly on sapphire (0001) substrate at 1100°C by hydride vapor phase epitaxy (HVPE) using AlCl 3 and NH3 as source gases. Growth rate over 10 μm/h was demonstrated by increasing input partial pressure of AlCl3. Also, it was found that the growth rate was sensitive to NH3 input partial pressure (PNH3°), and decreased rapidly with increase of PNH3°. Edge dislocation density estimated from full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curves was independent of the growth rate.

元の言語英語
ページ(範囲)2062-2065
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
2
発行部数7
DOI
出版物ステータス出版済み - 11 7 2005
外部発表Yes

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vapor phase epitaxy
hydrides
sapphire
partial pressure
edge dislocations
curves
diffraction
gases
x rays

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

これを引用

Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy. / Yamane, T.; Murakami, H.; Kangawa, Y.; Kumagai, Y.; Koukitu, A.

:: Physica Status Solidi C: Conferences, 巻 2, 番号 7, 07.11.2005, p. 2062-2065.

研究成果: ジャーナルへの寄稿記事

Yamane, T. ; Murakami, H. ; Kangawa, Y. ; Kumagai, Y. ; Koukitu, A. / Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy. :: Physica Status Solidi C: Conferences. 2005 ; 巻 2, 番号 7. pp. 2062-2065.
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AU - Koukitu, A.

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