Growth of thick AlN layer on sapphire (0001) substrate using hydride vapor phase epitaxy

T. Yamane, H. Murakami, Y. Kangawa, Y. Kumagai, A. Koukitu

研究成果: Contribution to journalArticle査読

14 被引用数 (Scopus)

抄録

Growth of thick AlN layer was performed directly on sapphire (0001) substrate at 1100°C by hydride vapor phase epitaxy (HVPE) using AlCl 3 and NH3 as source gases. Growth rate over 10 μm/h was demonstrated by increasing input partial pressure of AlCl3. Also, it was found that the growth rate was sensitive to NH3 input partial pressure (PNH3°), and decreased rapidly with increase of PNH3°. Edge dislocation density estimated from full width at half maximum (FWHM) of X-ray diffraction (XRD) rocking curves was independent of the growth rate.

本文言語英語
ページ(範囲)2062-2065
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
2
7
DOI
出版ステータス出版済み - 2005
外部発表はい

All Science Journal Classification (ASJC) codes

  • 凝縮系物理学

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