We have developed a new method for epitaxial growth of ultrathin (∼nm) 3C-SiC films on Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3). It was found that pit formation at the SiC/Si(100) interface was suppressed by increasing the pulse width and the surface roughness was decreased by decreasing the number of CH3SiH3 jet pulses. A linear relationship was observed between the film thickness and the pulse number in the thin film region of less than =40 nm, while the growth rate was decreased and the thickness was eventually saturated for further pulse irradiation.
|ジャーナル||Japanese Journal of Applied Physics|
|出版ステータス||出版済み - 1月 1 1999|
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