We experimentally show that half-metallic Co2MnSi films can be grown on SrTiO3(001) at around 350 °C by molecular beam epitaxy. Despite relatively low-temperature grown Co2MnSi films, L21-ordered structures, high saturation magnetic moments of ∼5.0 μB/f.u., and the negative sign of the anisotropic magnetoresistance (AMR) indicating half-metallic nature are obtained. For the 350°C-grown Co2MnSi films, a low Gilbert damping constant of ∼0.0035, implying the high spin polarization, is evaluated. This study will open a way for developing novel spintronic applications consisting of Co2MnSi and perovskite oxides such as high-performance interfacial multiferroic systems and efficient spin-to-charge conversion systems.
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