Hard X-ray photoemission spectroscopy of temperature-induced valence transition in EuNi2(Si0.20Ge0.80)2

Kazuya Yamamoto, Munetaka Taguchi, Nozomu Kamakura, Koji Horiba, Yasutaka Takata, Ashish Chainani, Shik Shin, Eiji Ikenaga, Kojiro Mimura, Masayuki Shiga, Hirofumi Wada, Hirofumi Namatame, Masaki Taniguchi, Mitsuhiro Awaji, Akihisa Takeuchi, Yoshinori Nishino, Daigo Miwa, Tetsuya Ishikawa, Keisuke Kobayashi

研究成果: Contribution to journalArticle査読

13 被引用数 (Scopus)

抄録

We investigate the temperature-induced mixed valence transition in EuNi2(Si0.20Ge0.80)2 using Hard X-ray (5940 eV) photoemission spectroscopy (HX-PES), with a probing depth larger than 5 nm. The Eu 3d, Ni 2p and Ge 2p core-level states are studied below and above the critical valence transition temperature, Tv = 80 K. HX-PES spectra at 40 K and 120 K show the mixed valence transition, with clear changes in the divalent and trivalent Eu 3d chemically shifted features, and negligible changes in the Ni 2p and Ge 2p states. The Eu 3d spectral shapes match very well with the results of the atomic calculations of the Eu2+ and Eu 3+ configurations, confirming intra-atomic multiplet features. The Eu 3d HX-PES spectra indicate a mean valence of 2.70 ± 0.03 at 40 K which changes to 2.40 ± 0.03 at 120 K, in good accord with the results of bulk Eu L-edge X-ray absorption spectroscopy measurements.

本文言語英語
ページ(範囲)2616-2619
ページ数4
ジャーナルjournal of the physical society of japan
73
10
DOI
出版ステータス出版済み - 10 2004
外部発表はい

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

フィンガープリント

「Hard X-ray photoemission spectroscopy of temperature-induced valence transition in EuNi<sub>2</sub>(Si<sub>0.20</sub>Ge<sub>0.80</sub>)<sub>2</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル