Heat and impurity transfer mechanisms of Czochralski and directional solidification processes

Koichi Kakimoto, X. J. Chen, L. J. Liu, H. Miyazawa, H. Matsuo, S. Nakano, S. Hisamatsu, Y. Kangawa

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

1 被引用数 (Scopus)

抄録

In this paper, results of global computation in a three-dimensional configuration for transverse magnetic field-applied Czochralski method to study distributions of temperature and impurity concentration are presented. The analysis includes a remelting and segregation model at an interface between a crystal and the melt. Deflection of an interface between a crystal and the melt is also taken into account. Time-dependent global analysis of the solidification process of a silicon ingot for photovoltaic is described in this paper. This model includes distributions of dislocation, impurity and point defects for a quasi-single silicon ingot grown by the solidification method. Heat and mass transfers in a square crucible are also discussed.

本文言語英語
ホスト出版物のタイトルECS Transactions - ISTC/CSTIC 2009 (CISTC)
ページ925-933
ページ数9
1 PART 2
DOI
出版ステータス出版済み - 2009
イベントISTC/CSTIC 2009 (CISTC) - Shanghai, 中国
継続期間: 3 19 20093 20 2009

出版物シリーズ

名前ECS Transactions
番号1 PART 2
18
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

その他

その他ISTC/CSTIC 2009 (CISTC)
国/地域中国
CityShanghai
Period3/19/093/20/09

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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