Heat and mass transfer in semiconductor melts during single-crystal growth processes

Koichi Kakimoto

研究成果: ジャーナルへの寄稿学術誌査読

13 被引用数 (Scopus)

抄録

The quality of large semiconductor crystals grown from melts is significantly affected by the heat and mass transfer in the melts. The current understanding of the phenomena, especially melt convection, is reviewed starting from the results of visualization using model fluids or silicon melt, and continuing to the detailed numerical calculations needed for quantitative modeling of processing with solidification. The characteristics of silicon flows are also reviewed by focusing on the Coriolis force in the rotating melt. Descriptions of flow instabilities are included that show the level of understanding of melt convection with a low Prandtl number. Based on hydrodynamics, the origin of the silicon flow structure is reviewed, and it is discussed whether silicon flow is completely turbulent or has an ordered structure. The phase transition from axisymmetric to nonaxisymmetric flow is discussed using different geometries. Additionally, surface-tension-driven flow is reviewed for Czochralski crystal growth systems.

本文言語英語
ページ(範囲)1827-1842
ページ数16
ジャーナルJournal of Applied Physics
77
5
DOI
出版ステータス出版済み - 1995
外部発表はい

!!!All Science Journal Classification (ASJC) codes

  • 物理学および天文学(全般)

フィンガープリント

「Heat and mass transfer in semiconductor melts during single-crystal growth processes」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル