Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition

Naoki Furuhata, Koichi Kakimoto, Masaji Yoshida, Taibun Kamejima

研究成果: ジャーナルへの寄稿記事

23 引用 (Scopus)

抄録

Heavily Si-doped GaAs layers were grown by a metalorganic chemical vapor deposition method using disilane (Si2H6) as a silicon dopant source gas. The grown layers were characterized by the van der Pauw, secondary ion mass spectroscopy, and low-temperature Fourier transformation infrared spectroscopy (FTIR) method. The carrier concentration has no growth temperature dependence from 550 to 700 °C temperature range. However, it has temperature dependence below 550 °C and above 700 °C. The carrier concentration of Si-doped GaAs is usually saturated at 6×10 18 cm-3 level. Further, Si doping makes the carrier concentration decrease. By using the low-temperature FTIR method, absorption bands for SiGa, SiAs, Si Ga-SiAs pair, and lower energy bands (374 and 369 cm -1) were observed in heavily Si-doped GaAs. The peak intensity for SiGa is smaller than that for SiAs, and the peak heights at 374 and 369 cm-1 are relatively larger than that for the other peaks. These facts suggest that, in heavily Si-doped GaAs, a part of SiGa formed SiGa related defects, which act as new donor centers.

元の言語英語
ページ(範囲)4692-4695
ページ数4
ジャーナルJournal of Applied Physics
64
発行部数9
DOI
出版物ステータス出版済み - 12 1 1988
外部発表Yes

Fingerprint

metalorganic chemical vapor deposition
Fourier transformation
infrared spectroscopy
temperature dependence
energy bands
mass spectroscopy
absorption spectra
defects
silicon
gases
ions
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition. / Furuhata, Naoki; Kakimoto, Koichi; Yoshida, Masaji; Kamejima, Taibun.

:: Journal of Applied Physics, 巻 64, 番号 9, 01.12.1988, p. 4692-4695.

研究成果: ジャーナルへの寄稿記事

Furuhata, Naoki ; Kakimoto, Koichi ; Yoshida, Masaji ; Kamejima, Taibun. / Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition. :: Journal of Applied Physics. 1988 ; 巻 64, 番号 9. pp. 4692-4695.
@article{0aea9d270c704e65babdc770903fb692,
title = "Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition",
abstract = "Heavily Si-doped GaAs layers were grown by a metalorganic chemical vapor deposition method using disilane (Si2H6) as a silicon dopant source gas. The grown layers were characterized by the van der Pauw, secondary ion mass spectroscopy, and low-temperature Fourier transformation infrared spectroscopy (FTIR) method. The carrier concentration has no growth temperature dependence from 550 to 700 °C temperature range. However, it has temperature dependence below 550 °C and above 700 °C. The carrier concentration of Si-doped GaAs is usually saturated at 6×10 18 cm-3 level. Further, Si doping makes the carrier concentration decrease. By using the low-temperature FTIR method, absorption bands for SiGa, SiAs, Si Ga-SiAs pair, and lower energy bands (374 and 369 cm -1) were observed in heavily Si-doped GaAs. The peak intensity for SiGa is smaller than that for SiAs, and the peak heights at 374 and 369 cm-1 are relatively larger than that for the other peaks. These facts suggest that, in heavily Si-doped GaAs, a part of SiGa formed SiGa related defects, which act as new donor centers.",
author = "Naoki Furuhata and Koichi Kakimoto and Masaji Yoshida and Taibun Kamejima",
year = "1988",
month = "12",
day = "1",
doi = "10.1063/1.341253",
language = "English",
volume = "64",
pages = "4692--4695",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition

AU - Furuhata, Naoki

AU - Kakimoto, Koichi

AU - Yoshida, Masaji

AU - Kamejima, Taibun

PY - 1988/12/1

Y1 - 1988/12/1

N2 - Heavily Si-doped GaAs layers were grown by a metalorganic chemical vapor deposition method using disilane (Si2H6) as a silicon dopant source gas. The grown layers were characterized by the van der Pauw, secondary ion mass spectroscopy, and low-temperature Fourier transformation infrared spectroscopy (FTIR) method. The carrier concentration has no growth temperature dependence from 550 to 700 °C temperature range. However, it has temperature dependence below 550 °C and above 700 °C. The carrier concentration of Si-doped GaAs is usually saturated at 6×10 18 cm-3 level. Further, Si doping makes the carrier concentration decrease. By using the low-temperature FTIR method, absorption bands for SiGa, SiAs, Si Ga-SiAs pair, and lower energy bands (374 and 369 cm -1) were observed in heavily Si-doped GaAs. The peak intensity for SiGa is smaller than that for SiAs, and the peak heights at 374 and 369 cm-1 are relatively larger than that for the other peaks. These facts suggest that, in heavily Si-doped GaAs, a part of SiGa formed SiGa related defects, which act as new donor centers.

AB - Heavily Si-doped GaAs layers were grown by a metalorganic chemical vapor deposition method using disilane (Si2H6) as a silicon dopant source gas. The grown layers were characterized by the van der Pauw, secondary ion mass spectroscopy, and low-temperature Fourier transformation infrared spectroscopy (FTIR) method. The carrier concentration has no growth temperature dependence from 550 to 700 °C temperature range. However, it has temperature dependence below 550 °C and above 700 °C. The carrier concentration of Si-doped GaAs is usually saturated at 6×10 18 cm-3 level. Further, Si doping makes the carrier concentration decrease. By using the low-temperature FTIR method, absorption bands for SiGa, SiAs, Si Ga-SiAs pair, and lower energy bands (374 and 369 cm -1) were observed in heavily Si-doped GaAs. The peak intensity for SiGa is smaller than that for SiAs, and the peak heights at 374 and 369 cm-1 are relatively larger than that for the other peaks. These facts suggest that, in heavily Si-doped GaAs, a part of SiGa formed SiGa related defects, which act as new donor centers.

UR - http://www.scopus.com/inward/record.url?scp=0342585251&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0342585251&partnerID=8YFLogxK

U2 - 10.1063/1.341253

DO - 10.1063/1.341253

M3 - Article

AN - SCOPUS:0342585251

VL - 64

SP - 4692

EP - 4695

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 9

ER -