Heteroepitaxial growth of gaas films on caf2/si(511) structures prepared with rapid thermal annealing

Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

研究成果: Contribution to journalArticle査読

2 被引用数 (Scopus)

抄録

Heteroepitaxial growth of CaF2 films on (511)Si and GaAs films on CaF2/Si(511) structures is investigated. CaF2 films and GaAs films are grown by vacuum evaporation and molecular beam epitaxy, respectively. Ion channeling measure-ments and replica transmission electron microscopy show that CaF2 films having good crystalline quality and surface steps can be formed by annealing at 900°C for 30 s after the growth at 550°C. GaAs films having smooth surfaces and good crystalline quality can be grown on the annealed CaF2/Si(511) structures. Differences in crystalline defects between GaAs films grown on (511) substrates and those on (100) substrates arc discussed based on results obtained from cross-sectional transmission electron microscopy.

本文言語英語
ページ(範囲)1784-1788
ページ数5
ジャーナルJapanese Journal of Applied Physics
28
10 R
DOI
出版ステータス出版済み - 10 1989

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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