High Bandwidth Active Gate Driver for Simultaneous Reduction of Switching Surge and Switching Loss of SiC-MOSFET

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

This paper investigates an active gate driver (AGD) for an SiC-MOSFET. The source current feedback type active gate driver utilizes the reactive voltage of the source wire inductance as a negative feedback signal to regulate the source current di/dt. Recently, the improvement of the switching performance of the AGD is limited due to the feedback system bandwidth. In this paper, a high bandwidth current feedback type power operational amplifier is applied as the gate drive circuit. Switching characteristics of the conventional resistive gate driver and the active gate driver are experimentally investigated by a double pulse test setup. The switching setup condition is 700 V / 80 A. This paper describes the construction of the AGD circuit and the experimental results. The over-shoot and ringing of the Vds and Is are reduced by using the active gate driver. In addition, the switching loss is simultaneously reduced.

本文言語英語
ホスト出版物のタイトル2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia
出版社Institute of Electrical and Electronics Engineers Inc.
ページ2097-2103
ページ数7
ISBN(電子版)9784886864253
DOI
出版ステータス出版済み - 2022
イベント2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia - Himeji, 日本
継続期間: 5月 15 20225月 19 2022

出版物シリーズ

名前2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia

会議

会議2022 International Power Electronics Conference, IPEC-Himeji 2022-ECCE Asia
国/地域日本
CityHimeji
Period5/15/225/19/22

!!!All Science Journal Classification (ASJC) codes

  • エネルギー工学および電力技術
  • 再生可能エネルギー、持続可能性、環境
  • 電子工学および電気工学
  • 安全性、リスク、信頼性、品質管理
  • 制御と最適化

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