High carrier mobility of 3.8cm2 V-1 S-1 in polydiacetylene thin films polymerized by electron beam irradiation

Takuji Kato, Mao Yasumatsu, Chikako Origuchi, Kyoji Tsutsui, Yasukiyo Ueda, Chihaya Adachi

研究成果: Contribution to journalArticle査読

13 被引用数 (Scopus)

抄録

The highest carrier mobility of polydiacetylene (PDA) thin films in field-effect transistors has been limited to less than 0.8cm2 V -1 S-1, although the main chain conduction should show higher carrier mobility potentially. We revealed that the cause of the low carrier mobility is due to the presence of local upheaval regions generated by the volume change through the polymerization process of diacetylene monomers. In order to suppress the occurrence of the upheaval regions, we found that electron beam (EB) irradiation is effective, resulted in the highest carrier mobility of μmax=3.8 cm2 V-1 S-1.

本文言語英語
論文番号091601
ジャーナルApplied Physics Express
4
9
DOI
出版ステータス出版済み - 9 2011

All Science Journal Classification (ASJC) codes

  • 工学(全般)
  • 物理学および天文学(全般)

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「High carrier mobility of 3.8cm<sup>2</sup> V<sup>-1</sup> S<sup>-1</sup> in polydiacetylene thin films polymerized by electron beam irradiation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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