抄録
We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.
| 元の言語 | 英語 |
|---|---|
| ホスト出版物のタイトル | Silicon Carbide and Related Materials, 2018 |
| 編集者 | Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield |
| 出版者 | Trans Tech Publications Ltd |
| ページ | 403-406 |
| ページ数 | 4 |
| ISBN（印刷物） | 9783035713329 |
| DOI | |
| 出版物ステータス | 出版済み - 1 1 2019 |
| イベント | 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 - Birmingham, 英国 継続期間: 9 2 2018 → 9 6 2018 |
出版物シリーズ
| 名前 | Materials Science Forum |
|---|---|
| 巻 | 963 MSF |
| ISSN（印刷物） | 0255-5476 |
会議
| 会議 | 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 |
|---|---|
| 国 | 英国 |
| 市 | Birmingham |
| 期間 | 9/2/18 → 9/6/18 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
これを引用
High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. / Imokawa, Kaname; Kikuchi, Toshifumi; Okamoto, Kento; Nakamura, Daisuke; Ikeda, Akihiro; Asano, Tanemasa; Ikenoue, Hiroshi.
Silicon Carbide and Related Materials, 2018. 版 / Peter M. Gammon; Vishal A. Shah; Richard A. McMahon; Michael R. Jennings; Oliver Vavasour; Philip A. Mawby; Faye Padfield. Trans Tech Publications Ltd, 2019. p. 403-406 (Materials Science Forum; 巻 963 MSF).研究成果: 著書/レポートタイプへの貢献 › 会議での発言
}
TY - GEN
T1 - High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication
AU - Imokawa, Kaname
AU - Kikuchi, Toshifumi
AU - Okamoto, Kento
AU - Nakamura, Daisuke
AU - Ikeda, Akihiro
AU - Asano, Tanemasa
AU - Ikenoue, Hiroshi
PY - 2019/1/1
Y1 - 2019/1/1
N2 - We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.
AB - We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.
UR - http://www.scopus.com/inward/record.url?scp=85071863555&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85071863555&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.963.403
DO - 10.4028/www.scientific.net/MSF.963.403
M3 - Conference contribution
AN - SCOPUS:85071863555
SN - 9783035713329
T3 - Materials Science Forum
SP - 403
EP - 406
BT - Silicon Carbide and Related Materials, 2018
A2 - Gammon, Peter M.
A2 - Shah, Vishal A.
A2 - McMahon, Richard A.
A2 - Jennings, Michael R.
A2 - Vavasour, Oliver
A2 - Mawby, Philip A.
A2 - Padfield, Faye
PB - Trans Tech Publications Ltd
ER -