High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication

Kaname Imokawa, Toshifumi Kikuchi, Kento Okamoto, Daisuke Nakamura, Akihiro Ikeda, Tanemasa Asano, Hiroshi Ikenoue

研究成果: Chapter in Book/Report/Conference proceedingConference contribution

抄録

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

本文言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials, 2018
編集者Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
出版社Trans Tech Publications Ltd
ページ403-406
ページ数4
ISBN(印刷版)9783035713329
DOI
出版ステータス出版済み - 1 1 2019
イベント12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 - Birmingham, 英国
継続期間: 9 2 20189 6 2018

出版物シリーズ

名前Materials Science Forum
963 MSF
ISSN(印刷版)0255-5476
ISSN(電子版)1662-9752

会議

会議12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
Country英国
CityBirmingham
Period9/2/189/6/18

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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