High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication

Kaname Imokawa, Toshifumi Kikuchi, Kento Okamoto, Daisuke Nakamura, Akihiro Ikeda, Tanemasa Asano, Hiroshi Ikenoue

研究成果: 著書/レポートタイプへの貢献会議での発言

抄録

We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

元の言語英語
ホスト出版物のタイトルSilicon Carbide and Related Materials, 2018
編集者Peter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
出版者Trans Tech Publications Ltd
ページ403-406
ページ数4
ISBN(印刷物)9783035713329
DOI
出版物ステータス出版済み - 1 1 2019
イベント12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 - Birmingham, 英国
継続期間: 9 2 20189 6 2018

出版物シリーズ

名前Materials Science Forum
963 MSF
ISSN(印刷物)0255-5476

会議

会議12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
英国
Birmingham
期間9/2/189/6/18

Fingerprint

Excimer lasers
excimer lasers
Doping (additives)
Fabrication
fabrication
Costs
electric contacts
Thin films
junction diodes
Temperature
electrical resistivity
Laser ablation
thin films
laser ablation
transmission lines
Electric lines
implantation
Diodes
Electrodes
electrodes

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

これを引用

Imokawa, K., Kikuchi, T., Okamoto, K., Nakamura, D., Ikeda, A., Asano, T., & Ikenoue, H. (2019). High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. : P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, P. A. Mawby, & F. Padfield (版), Silicon Carbide and Related Materials, 2018 (pp. 403-406). (Materials Science Forum; 巻数 963 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.963.403

High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. / Imokawa, Kaname; Kikuchi, Toshifumi; Okamoto, Kento; Nakamura, Daisuke; Ikeda, Akihiro; Asano, Tanemasa; Ikenoue, Hiroshi.

Silicon Carbide and Related Materials, 2018. 版 / Peter M. Gammon; Vishal A. Shah; Richard A. McMahon; Michael R. Jennings; Oliver Vavasour; Philip A. Mawby; Faye Padfield. Trans Tech Publications Ltd, 2019. p. 403-406 (Materials Science Forum; 巻 963 MSF).

研究成果: 著書/レポートタイプへの貢献会議での発言

Imokawa, K, Kikuchi, T, Okamoto, K, Nakamura, D, Ikeda, A, Asano, T & Ikenoue, H 2019, High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. : PM Gammon, VA Shah, RA McMahon, MR Jennings, O Vavasour, PA Mawby & F Padfield (版), Silicon Carbide and Related Materials, 2018. Materials Science Forum, 巻. 963 MSF, Trans Tech Publications Ltd, pp. 403-406, 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018, Birmingham, 英国, 9/2/18. https://doi.org/10.4028/www.scientific.net/MSF.963.403
Imokawa K, Kikuchi T, Okamoto K, Nakamura D, Ikeda A, Asano T その他. High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. : Gammon PM, Shah VA, McMahon RA, Jennings MR, Vavasour O, Mawby PA, Padfield F, 編集者, Silicon Carbide and Related Materials, 2018. Trans Tech Publications Ltd. 2019. p. 403-406. (Materials Science Forum). https://doi.org/10.4028/www.scientific.net/MSF.963.403
Imokawa, Kaname ; Kikuchi, Toshifumi ; Okamoto, Kento ; Nakamura, Daisuke ; Ikeda, Akihiro ; Asano, Tanemasa ; Ikenoue, Hiroshi. / High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication. Silicon Carbide and Related Materials, 2018. 編集者 / Peter M. Gammon ; Vishal A. Shah ; Richard A. McMahon ; Michael R. Jennings ; Oliver Vavasour ; Philip A. Mawby ; Faye Padfield. Trans Tech Publications Ltd, 2019. pp. 403-406 (Materials Science Forum).
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abstract = "We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.",
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AU - Imokawa, Kaname

AU - Kikuchi, Toshifumi

AU - Okamoto, Kento

AU - Nakamura, Daisuke

AU - Ikeda, Akihiro

AU - Asano, Tanemasa

AU - Ikenoue, Hiroshi

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N2 - We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

AB - We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.

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