@inproceedings{6f8aeb67475340c69cd8b43c3c3f2f81,
title = "High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication",
abstract = "We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.",
author = "Kaname Imokawa and Toshifumi Kikuchi and Kento Okamoto and Daisuke Nakamura and Akihiro Ikeda and Tanemasa Asano and Hiroshi Ikenoue",
year = "2019",
month = jan,
day = "1",
doi = "10.4028/www.scientific.net/MSF.963.403",
language = "English",
isbn = "9783035713329",
series = "Materials Science Forum",
publisher = "Trans Tech Publications Ltd",
pages = "403--406",
editor = "Gammon, {Peter M.} and Shah, {Vishal A.} and McMahon, {Richard A.} and Jennings, {Michael R.} and Oliver Vavasour and Mawby, {Philip A.} and Faye Padfield",
booktitle = "Silicon Carbide and Related Materials, 2018",
note = "12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 ; Conference date: 02-09-2018 Through 06-09-2018",
}