TY - GEN
T1 - High-concentration, low-temperature, and low-cost excimer laser doping for 4h-sic power device fabrication
AU - Imokawa, Kaname
AU - Kikuchi, Toshifumi
AU - Okamoto, Kento
AU - Nakamura, Daisuke
AU - Ikeda, Akihiro
AU - Asano, Tanemasa
AU - Ikenoue, Hiroshi
N1 - Publisher Copyright:
© 2019 Trans Tech Publications Ltd, Switzerland.
PY - 2019
Y1 - 2019
N2 - We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.
AB - We developed a novel KrF excimer laser doping system for 4H-SiC power devices, and demonstrated laser doping of SiC with Al thin film deposited on the surface. As seen from the results of the Al depth profile, high concentration implantation (~ 1021 cm-3 at the surface) of Al was achieved by laser ablation of the Al thin film. A high, built-in-potential (~3.5 V) of the pn junction diode was clearly seen in the I-V curve. In addition, the contact resistivity of the deposited Al/Ti electrodes on the surface was 1.9 × 10−4 Ωcm2 by TLM (Transmission Line Model). It was confirmed that a high concentration of Al doping and low contact resistivity were achieved by the KrF excimer laser doping system.
UR - http://www.scopus.com/inward/record.url?scp=85071863555&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85071863555&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/MSF.963.403
DO - 10.4028/www.scientific.net/MSF.963.403
M3 - Conference contribution
AN - SCOPUS:85071863555
SN - 9783035713329
T3 - Materials Science Forum
SP - 403
EP - 406
BT - Silicon Carbide and Related Materials, 2018
A2 - Gammon, Peter M.
A2 - Shah, Vishal A.
A2 - McMahon, Richard A.
A2 - Jennings, Michael R.
A2 - Vavasour, Oliver
A2 - Mawby, Philip A.
A2 - Padfield, Faye
PB - Trans Tech Publications Ltd
T2 - 12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
Y2 - 2 September 2018 through 6 September 2018
ER -