High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain

T. Sada, K. Yamamoto, H. Yang, D. Wang, H. Nakashima

研究成果: 会議への寄与タイプ › 学会誌 › 査読

本文言語	英語
ページ	737-738
ページ数	2
DOI	https://doi.org/10.7567/ssdm.2012.d-4-2
出版ステータス	出版済み - 9月 26 2012
イベント	2012 International Conference on Solid State Devices and Materials (SSDM2012) - Kyoto International Conference Center, Kyoto, 日本継続期間: 9月 25 2012 → 9月 27 2012

会議	2012 International Conference on Solid State Devices and Materials (SSDM2012)
国/地域	日本
City	Kyoto
Period	9/25/12 → 9/27/12

文献へのアクセス

@conference{4230aa7877634097baef91fd19ffd447,

title = "High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain",

author = "T. Sada and K. Yamamoto and H. Yang and D. Wang and H. Nakashima",

year = "2012",

month = sep,

day = "26",

doi = "10.7567/ssdm.2012.d-4-2",

language = "English",

pages = "737--738",

note = "2012 International Conference on Solid State Devices and Materials (SSDM2012) ; Conference date: 25-09-2012 Through 27-09-2012",

}

TY - CONF

T1 - High Hole-Mobility Ge p-MOSFET with HfGe Schottky Source/Drain

AU - Sada, T.

AU - Yamamoto, K.

AU - Yang, H.

AU - Wang, D.

AU - Nakashima, H.

PY - 2012/9/26

Y1 - 2012/9/26

U2 - 10.7567/ssdm.2012.d-4-2

DO - 10.7567/ssdm.2012.d-4-2

M3 - Paper

SP - 737

EP - 738

T2 - 2012 International Conference on Solid State Devices and Materials (SSDM2012)

Y2 - 25 September 2012 through 27 September 2012

ER -