High-hole-mobility single-crystalline ge thin films formed on insulating substrates by SiGe mixing-triggered directional melting growth

Kaoru Toko, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

6 被引用数 (Scopus)

抄録

The development of high-carrier-mobility Ge-channel thin-film transistors (TFTs) is desired to realize advanced system-in-displays. To achieve the development of single-crystalline Ge films on insulating substrates, we have developed the directional melting growth process of amorphous Ge by using polycrystalline Si islands as growth seeds. Defect-free single-crystalline Ge stripes of 400 mm length are realized, and high-holemobilities of more than 1000 cm2 V-1 s-1 are demonstrated in the entire lateral growth region. This method opens up the possibility of fabricating high-speed Ge-channel TFTs for system-in-displays.

本文言語英語
論文番号04DA08
ジャーナルJapanese journal of applied physics
49
4 PART 2
DOI
出版ステータス出版済み - 4 1 2010

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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