High-input-power-allowable uni-travelling-carrier waveguide photodiodes with semiinsulating-lnP buried structure

M. Yuda, K. Kato, R. Iga, M. Mitsuhara

研究成果: Contribution to journalArticle査読

7 被引用数 (Scopus)

抄録

A semi-insulating InP buried structure is applied to a unitravelling-carrier waveguide photodiode to enable the device to receive high input power by dispersing the heat generated from the waveguide-mesa region. The product of the photocurrent and applied voltage, which indicates the allowable level of input power, is four times higher than that of a polyimide-passivated mesa structure. The device has a product of ∼ 120mW (23.5mA × 5V), a responsivity of 0.7AAV, and a bandwidth of 47GHz.

本文言語英語
ページ(範囲)1377-1379
ページ数3
ジャーナルElectronics Letters
35
16
DOI
出版ステータス出版済み - 8 5 1999
外部発表はい

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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