Metal-oxide-semiconductor (MOS) capacitors with various gate dielectrics were fabricated on (111) oriented n-type 3C-SiC. Deposited SiO2 by sputtering without an interlayer (IL) and thermally grown SiO2 show deteriorated capacitance-voltage (C-V) characteristics and high interface trap density (D it) over 1011-1012 cm-2 eV-1. By inserting an IL, C-V and leakage current characteristics are improved. In particular, an atomic layer deposited (ALD) Al2O3-IL is suitable for 3C-SiC, which successfully achieved low D it in the order of 1010 cm-2 eV-1. MOS capacitor with the same gate dielectric on n-Si shows contradictory characteristics. Structural analysis shows it is considered the flat and uniform interface at Al2O3/3C-SiC leads good electrical characteristics. The 3C-SiC MOS capacitor with Al2O3-IL showed slightly negative flatband voltage and it is induced by negative interfacial dipole generated at the Al2O3/3C-SiC interface. This 3C-SiC MOS structure can be fabricated at low process temperature (<600 C), which means the overall process for device application can be designed more flexibly.
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