TY - JOUR
T1 - High intrinsic modulation bandwidth InGaAsP/InGaAsP 1.55μm asymmetric active multimode interferometer laser diode by using split pump configuration
AU - Uddin, Mohammad Nasir
AU - Kizu, Takaaki
AU - Hinokuma, Yasuhiro
AU - Hong, Bingzhou
AU - Tajima, Akio
AU - Kato, Kazutoshi
AU - Hamamoto, Kiichi
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014/8
Y1 - 2014/8
N2 - 1.55μm InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric active multimode laser diode (active MMI-LD) with split pumping scheme has been demonstrated. Asymmeric configuration ensures the singlewavelength output from the designed device. Moreover, the advantage of having large multimode active pumping section behind the splitted modulation section is the key contributor for having higher photon density in modulation section without increasing the device length. By utilizing the split pump configuration in the designed active MMI-LD, high intrinsic 3 dB modulation bandwidth of 24.6GHz is achieved. To the best of our knowledge this is the highest reported intrinsic modulation bandwidth for active MMI-LD. Required photon density to achieve more than 40 GHz 3 dB bandwidth for direct modulation is also clarified.
AB - 1.55μm InGaAsP/InGaAsP multiple quantum well (MQW) asymmetric active multimode laser diode (active MMI-LD) with split pumping scheme has been demonstrated. Asymmeric configuration ensures the singlewavelength output from the designed device. Moreover, the advantage of having large multimode active pumping section behind the splitted modulation section is the key contributor for having higher photon density in modulation section without increasing the device length. By utilizing the split pump configuration in the designed active MMI-LD, high intrinsic 3 dB modulation bandwidth of 24.6GHz is achieved. To the best of our knowledge this is the highest reported intrinsic modulation bandwidth for active MMI-LD. Required photon density to achieve more than 40 GHz 3 dB bandwidth for direct modulation is also clarified.
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U2 - 10.7567/JJAP.53.08MB09
DO - 10.7567/JJAP.53.08MB09
M3 - Article
AN - SCOPUS:84905988411
VL - 53
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 8 SPEC. ISSUE 2
M1 - 08MB09
ER -