high microwave performance ion-implanted gaas mesfets on inp substrates

M. Wada, K. Kato

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

Ion implantation was employed, for the first time, in fabricating GaAs MESFETs in undoped 2 μm thick GaAs epitaxial layers directly grown on InP substrates by low-pressure MOVPE. The Si-ion-implanted GaAs layer on InP substrates showed excellent electrical characteristics: a mobility of 4300cm2/Vs with a carrier density of 2 x 10 17 cm-3 at room temperature. The MESFET (0.8μm gate length) exhibited a current-gain cutoff frequency of 25 GHz and a maximum frequency of oscillation of 53 GHz, the highest values yet reported for GaAs MESFETs on InP substrates. These results demonstrate the high potential of ionimplanted MESFETs as electronic devices for high-speed InP-based OEICs.

元の言語英語
ページ(範囲)197-199
ページ数3
ジャーナルElectronics Letters
26
発行部数3
DOI
出版物ステータス出版済み - 10 1990

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Microwaves
Ions
Substrates
Integrated optoelectronics
Metallorganic vapor phase epitaxy
Epitaxial layers
Cutoff frequency
Ion implantation
Carrier concentration
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

これを引用

high microwave performance ion-implanted gaas mesfets on inp substrates. / Wada, M.; Kato, K.

:: Electronics Letters, 巻 26, 番号 3, 10.1990, p. 197-199.

研究成果: ジャーナルへの寄稿記事

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