High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates

Masanobu Miyao; Kaoru Toko; Masashi Kurosawa; Takanori Tanaka; Takashi Sakane; Yasuharu Ohta; Naoyuki Kawabata; Hiroyuki Yokoyama; Taizoh Sadoh

doi:10.1109/ICSICT.2010.5667440

High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates

Masanobu Miyao, Kaoru Toko, Masashi Kurosawa, Takanori Tanaka, Takashi Sakane, Yasuharu Ohta, Naoyuki Kawabata, Hiroyuki Yokoyama, Taizoh Sadoh

電子デバイス工学

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

抄録

Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm ²/Vs is also demonstrated.

本文言語	英語
ホスト出版物のタイトル	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings
ページ	827-830
ページ数	4
DOI	https://doi.org/10.1109/ICSICT.2010.5667440
出版ステータス	出版済み - 12月 1 2010
イベント	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology - Shanghai, 中国継続期間: 11月 1 2010 → 11月 4 2010

出版物シリーズ

名前	ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings

その他

その他	2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology
国/地域	中国
City	Shanghai
Period	11/1/10 → 11/4/10

!!!All Science Journal Classification (ASJC) codes

ハードウェアとアーキテクチャ
電子工学および電気工学

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10.1109/ICSICT.2010.5667440

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引用スタイル

Miyao, M., Toko, K., Kurosawa, M., Tanaka, T., Sakane, T., Ohta, Y., Kawabata, N., Yokoyama, H., & Sadoh, T. (2010). High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings (pp. 827-830). [5667440] (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). https://doi.org/10.1109/ICSICT.2010.5667440

High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. / Miyao, Masanobu; Toko, Kaoru; Kurosawa, Masashi その他.
ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 827-830 5667440 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

研究成果: 書籍/レポートタイプへの寄稿 › 会議への寄与

Miyao, M, Toko, K, Kurosawa, M, Tanaka, T, Sakane, T, Ohta, Y, Kawabata, N, Yokoyama, H & Sadoh, T 2010, High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. in ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings., 5667440, ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings, pp. 827-830, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Shanghai, 中国, 11/1/10. https://doi.org/10.1109/ICSICT.2010.5667440

Miyao M, Toko K, Kurosawa M, Tanaka T, Sakane T, Ohta Y その他. High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. In ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. p. 827-830. 5667440. (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings). doi: 10.1109/ICSICT.2010.5667440

Miyao, Masanobu ; Toko, Kaoru ; Kurosawa, Masashi その他. / High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates. ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings. 2010. pp. 827-830 (ICSICT-2010 - 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology, Proceedings).

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abstract = "Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm 2/Vs is also demonstrated.",

author = "Masanobu Miyao and Kaoru Toko and Masashi Kurosawa and Takanori Tanaka and Takashi Sakane and Yasuharu Ohta and Naoyuki Kawabata and Hiroyuki Yokoyama and Taizoh Sadoh",

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AU - Miyao, Masanobu

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AU - Tanaka, Takanori

AU - Sakane, Takashi

AU - Ohta, Yasuharu

AU - Kawabata, Naoyuki

AU - Yokoyama, Hiroyuki

AU - Sadoh, Taizoh

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N2 - Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm 2/Vs is also demonstrated.

AB - Single-crystal Ge films on insulating substrates are desired to achieve advanced 3-dimensional large-scale integrated circuits (3D-LSIs) and thin-film transistors (TFTs). We have developed the rapid-melting Ge growth seeded from Si substrates, which achieves giant Ge on insulator (GOI) structures with (100), (110), and (111) orientations. Driving force to initiate the lateral growth is clarified as the solidification temperature gradient originating from melting induced Si-Ge mixing. Combination with the artificial Si micro-seed technique and the rapid melting growth enables the single-crystal defect-free Ge on transparent insulating substrates. High hole mobility exceeding 1000 cm 2/Vs is also demonstrated.

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High-mobility defect-free Ge single-crystals by rapid melting growth on insulating substrates

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出版物シリーズ

その他

!!!All Science Journal Classification (ASJC) codes

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