High mobility sputtered InSb film by blue laser diode annealing

C. J. Koswaththage, T. Higashizako, T. Okada, Taizoh Sadoh, M. Furuta, B. S. Bae, T. Noguchi

研究成果: ジャーナルへの寄稿記事

抜粋

InSb thin film was deposited on glass by r.f. sputtering using the InSb (atomic ratio of 1:1) target. The film was capped by SiO2 film to prevent the effusion of Sb of low melting point. After that, blue laser beam at 445 nm of controlled power density was irradiated using CW scanning mode. The film was crystalized successfully with keeping the ratio of In and Sb as (1:1). High electron Hall mobility of 1,050 cm2/(Vs) was obtained without degrading under glass. New device applications such as magnetic or infrared sensor system with poly Si TFTs are expected not only on glass but also on flexible panel such as on plastic sheet.

元の言語英語
記事番号045009
ジャーナルAIP Advances
9
発行部数4
DOI
出版物ステータス出版済み - 4 1 2019

    フィンガープリント

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

これを引用

Koswaththage, C. J., Higashizako, T., Okada, T., Sadoh, T., Furuta, M., Bae, B. S., & Noguchi, T. (2019). High mobility sputtered InSb film by blue laser diode annealing. AIP Advances, 9(4), [045009]. https://doi.org/10.1063/1.5087235