High n-type Sb dopant activation in Ge-rich poly-Ge1-xSnx layers on SiO2 using pulsed laser annealing in flowing water

Kouta Takahashi, Masashi Kurosawa, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima

研究成果: Contribution to journalArticle査読

10 被引用数 (Scopus)

抄録

Heavy n-type doping in polycrystalline Ge (poly-Ge) is still under development owing to the low solid solubility and the low activation ratio of group-V dopants in Ge. To solve this problem, we have investigated ultra-short (55 ns) laser pulse annealing in flowing water for Sb-doped amorphous Ge1-xSnx layers (x ≈ 0.02) on SiO2. It is found that fully melting a Ge1-xSnx layer down to the Ge1-xSnx/SiO2 interface leads to a large grained (∼0.8 μmη) growth, resulting in not only a high electrical activation ratio (∼60%) of Sb atoms in the polycrystals but also a high electron density around 1020 cm-3. As a result, the electron mobility in the Ge-rich poly-Ge1-xSnx layers exceeds that in single-crystalline Si even in the region of a high electron density around 1020 cm-3. The low thermal budget process opens up the possibility for developing Ge1-xSnx based devices fabricated on 3D integrated circuits as well as flexible substrates.

本文言語英語
論文番号062104
ジャーナルApplied Physics Letters
112
6
DOI
出版ステータス出版済み - 2 5 2018

All Science Journal Classification (ASJC) codes

  • 物理学および天文学(その他)

フィンガープリント

「High n-type Sb dopant activation in Ge-rich poly-Ge<sub>1-</sub><sub>x</sub>Sn<sub>x</sub> layers on SiO<sub>2</sub> using pulsed laser annealing in flowing water」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

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