High performance all-solution processed InZnO thin-film transistors via photo-functionalization at varying fluence and annealing environment

Dianne Corsino, Juan Paolo Bermundo, Mami N. Fujif, Yasuaki Ishikawa, Hiroshi Ikenoue, Yukiharu Uraoka

研究成果: Contribution to journalConference article査読

抄録

This work presents an all-solution approach to oxide TFT fabrication through the photo-functionalization of InZnO using photo-assisted methods. We fabricated high-performance all-solution devices using UV and excimer laser treatment which are competitive with vacuum-processed TFTs. This work is a big step towards large-area manufacture of low-cost electronics.

本文言語英語
ページ(範囲)1350-1353
ページ数4
ジャーナルDigest of Technical Papers - SID International Symposium
51
1
DOI
出版ステータス出版済み - 2020
イベント57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online
継続期間: 8 3 20208 7 2020

All Science Journal Classification (ASJC) codes

  • 工学(全般)

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