High performance all solution processed oxide thin-film transistor via photo-induced semiconductor-to-conductor transformation of a-InZnO

Juan Paolo S. Bermundo, Chaiyanan Kulchaisit, Dianne C. Corsino, Aimi Syairah, Mami N. Fujii, Hiroshi Ikenoue, Yasuaki Ishikawa, Yukiharu Uraoka

研究成果: Contribution to journalConference article

2 引用 (Scopus)

抜粋

We report the development of high performance all-solution processed oxide thin-film transistors (TFT) via selective photo-induced semiconductor-to-conductor transformation of a-InZnO. This simple method enables TFT fabrication through deposition of three main layers without additional source, drain, and gate deposition. This method has a large potential for high throughput roll-to-roll fabrication.

元の言語英語
ページ(範囲)422-425
ページ数4
ジャーナルDigest of Technical Papers - SID International Symposium
50
発行部数Book 1
DOI
出版物ステータス出版済み - 1 1 2019
イベントSID Symposium, Seminar, and Exhibition 2019, Display Week 2019 - San Jose, 米国
継続期間: 5 12 20195 17 2019

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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