High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode

Toshio Tsurushima; Yi-Qun Zhang; Hiroki Yasunaga; Atsushi Kenjo; Toshio Tsurushima; Masanobu Miyao

doi:10.1143/JJAP.40.2775

High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode

Toshio Tsurushima, Yi-Qun Zhang, Hiroki Yasunaga, Atsushi Kenjo, Toshio Tsurushima, Masanobu Miyao

研究成果: Contribution to journal › Article › 査読

抄録

The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300ºC was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400ºC. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.

本文言語	英語
ページ（範囲）	2775-2778
ページ数	4
ジャーナル	Japanese Journal of Applied Physics, Part 2: Letters
巻	40
号	4
DOI	https://doi.org/10.1143/JJAP.40.2775
出版ステータス	出版済み - 4 1 2001
外部発表	はい

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10.1143/JJAP.40.2775

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引用スタイル

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title = "High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode",

abstract = "The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300ºC was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400ºC. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.",

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AU - Tsurushima, Toshio

AU - Zhang, Yi-Qun

AU - Yasunaga, Hiroki

AU - Kenjo, Atsushi

AU - Tsurushima, Toshio

AU - Miyao, Masanobu

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N2 - The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300ºC was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400ºC. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.

AB - The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300ºC was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400ºC. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.

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DO - 10.1143/JJAP.40.2775

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