High-Performance MOS Tunneling Cathode with CoSi_2 Gate Electrode

Toshio Tsurushima, Yi-Qun Zhang, Hiroki Yasunaga, Atsushi Kenjo, Toshio Tsurushima, Masanobu Miyao

研究成果: Contribution to journalArticle査読

抄録

The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi<FONT SIZE="-1"><SUB>2</SUB></FONT> gates was demonstrated. First, the deposition process of CoSi<FONT SIZE="-1"><SUB>2</SUB></FONT> was optimized. Stoichiometric CoSi<FONT SIZE="-1"><SUB>2</SUB></FONT> films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300<FONT SIZE="-1"><SUP>º</SUP></FONT>C was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi<FONT SIZE="-1"><SUB>2</SUB></FONT> gates formed at 400<FONT SIZE="-1"><SUP>º</SUP></FONT>C. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10<FONT SIZE="-1"><SUP>-3</SUP></FONT> for the 5 nm CoSi<FONT SIZE="-1"><SUB>2</SUB></FONT> cathode. The efficiency did not depend on the electric field above 8.5 MV cm<FONT SIZE="-1"><SUP>-1</SUP></FONT>. Thus, the CoSi<FONT SIZE="-1"><SUB>2</SUB></FONT> gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm<FONT SIZE="-1"><SUP>-1</SUP></FONT>.
本文言語英語
ページ(範囲)2775-2778
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
40
4
DOI
出版ステータス出版済み - 4 1 2001
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