The high performance of metal-oxide-semiconductor (MOS) tunneling cathodes with CoSi2 gates was demonstrated. First, the deposition process of CoSi2 was optimized. Stoichiometric CoSi2 films were formed by codeposition with Co and Si. The electrical measurement suggested that deposition above 300°C was necessary to obtain low-resistivity silicide films. Second, operation characteristics were evaluated for MOS tunneling cathodes with CoSi2 gates formed at 400°C. The emission efficiency increased with decreasing gate thickness and became as high as 1.5 × 10-3 for the 5 nm CoSi2 cathode. The efficiency did not depend on the electric field above 8.5 MV cm-1. Thus, the CoSi2 gates were deemed suitable for operation at higher electric fields to obtain larger emission currents. The lifetime of the cathodes corresponded to 500 h for operation at 8.5 MV cm-1.
|ジャーナル||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|出版物ステータス||出版済み - 4 1 2001|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)