High performance organic field-effect transistors based on [2,2′]bi[naphtho[2,3-b]thiophenyl] with a simple structure

Masashi Mamada, Jun Ichi Nishida, Daisuke Kumaki, Shizuo Tokito, Yoshiro Yamashita

研究成果: Contribution to journalArticle査読

30 被引用数 (Scopus)

抄録

A novel semiconductor with naphtho[2,3-b]thiophene rings was synthesized and characterized by using single crystal X-ray structure analysis, absorption and emission spectra, electrochemical measurements, quantum chemical calculations, thin-film X-ray diffraction and AFM studies. FET devices using the molecule as the active layer showed high mobilities and high air stability. The hole mobility was enhanced to 0.67 cm2 V-1 s-1 in air.

本文言語英語
ページ(範囲)3442-3447
ページ数6
ジャーナルJournal of Materials Chemistry
18
29
DOI
出版ステータス出版済み - 2008
外部発表はい

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 材料化学

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