High Performance p- and n-Type Light-Emitting Field-Effect Transistors Employing Thermally Activated Delayed Fluorescence

Jan Sobus, Fatima Bencheikh, Masashi Mamada, Robert Wawrzinek, Jean Charles Ribierre, Chihaya Adachi, Shih Chun Lo, Ebinazar B. Namdas

研究成果: Contribution to journalArticle査読

21 被引用数 (Scopus)

抄録

Light-emitting field-effect transistors (LEFETs) are an emerging type of devices that combine light-emitting properties with logical switching function. One of the factors limiting their efficiency stems from the spin statistics of electrically generated excitons. Only 25% of them, short lived singlet states, are capable of light emission, with the other 75% being long lived triplet states that are wasted as heat due to spin-forbidden processes. Traditionally, the way to overcome this limitation is to use phosphorescent materials as additional emission channel harnessing the triplet excitons. Here, an alternative strategy for triplet usage in LEFETs in the form of thermally activated delayed fluorescence (TADF) is presented. Devices employing a TADF capable material, 4CzIPN (2,4,5,6-tetra[9H-carbazol-9-yl]isophthalonitrile), in both n-type and p-type configurations are shown. They manifest excellent electrical characteristics, consistent brightness in the range of 100–1,000 cd m-2 and external quantum efficiency (EQE) of up to 0.1%, which is comparable to the equivalent organic light-emitting diode (OLED) based on the same materials. Simulation identifies the poor light out-coupling as the main reason for lower than expected EQEs. Transmission measurements show it can be partially alleviated using a more transparent top contact, however more structural optimization is needed to tap the full potential of the device.

本文言語英語
論文番号1800340
ジャーナルAdvanced Functional Materials
28
28
DOI
出版ステータス出版済み - 7 11 2018
外部発表はい

All Science Journal Classification (ASJC) codes

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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