The metal imprint technology was found to be effective in the preparation of large grains of silicon at controlled sites. Thin film transistors (TFT) fabricated by this technique showed field effect mobility upto 400cm2/Vs. Superior performance and uniform characteristics were obtained by growing the channel in a single-grain.
|出版ステータス||出版済み - 1 1 2001|
|イベント||Device Research Conference (DRC) - Notre Dame, IN, 米国|
継続期間: 6 25 2001 → 6 27 2001
|その他||Device Research Conference (DRC)|
|City||Notre Dame, IN|
|Period||6/25/01 → 6/27/01|
All Science Journal Classification (ASJC) codes