High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics

Li Fan Shen, Sen Po Yip, Zai Xing Yang, Ming Fang, Tak Fu Hung, Edwin Y.B. Pun, Johnny C. Ho

研究成果: Contribution to journalArticle査読

12 被引用数 (Scopus)

抄録

Although wrap-gated nanowire field-effect-transistors (NWFETs) have been explored as an ideal electronic device geometry for low-power and high-frequency applications, further performance enhancement and practical implementation are still suffering from electron scattering on nanowire surface/interface traps between the nanowire channel and gate dielectric as well as the complicated device fabrication scheme. Here, we report the development of high-performance wrap-gated InGaAs NWFETs using conventional sputtered Al2O3 layers as gate dielectrics, instead of the typically employed atomic layer deposited counterparts. Importantly, the surface chemical passivation of NW channels performed right before the dielectric deposition is found to significantly alleviate plasma induced defect traps on the NW channel. Utilizing this passivation, the wrap-gated device exhibits superior electrical performances: a high ION/IOFF ratio of ∼2 × 106, an extremely low sub-threshold slope of 80 mV/decade and a peak field-effect electron mobility of ∼1600 cm2/(Vs) at VDS = 0.1 V at room temperature, in which these values are even better than the ones of state-of-the-art NWFETs reported so far. By combining sputtering and pre-deposition chemical passivation to achieve high-quality gate dielectrics for wrap-gated NWFETs, the superior gate coupling and electrical performances have been achieved, confirming the effectiveness of our hybrid approach for future advanced electronic devices.

本文言語英語
論文番号16871
ジャーナルScientific reports
5
DOI
出版ステータス出版済み - 11 26 2015
外部発表はい

All Science Journal Classification (ASJC) codes

  • General

フィンガープリント 「High-Performance Wrap-Gated InGaAs Nanowire Field-Effect Transistors with Sputtered Dielectrics」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル