High-Q SWCPL for CMOS millimeter-wave technology

D. A.A. Mat, Ramesh Pokharel, R. Sapawi, Haruichi Kanaya, K. Yoshida

研究成果: ジャーナルへの寄稿記事

1 引用 (Scopus)

抄録

In this paper, slow wave coplanar waveguide transmission line (SWCPL) is proposed on patterned ground shields in 0.18 μm CMOS technology for low-loss passive devices, components and interconnects in millimeter wave region. Patterned grounds act to produce the slow-wave effect and they are usually kept below the metallization plane to reduce dielectric loss of the lossy silicon substrates. The measured attenuation loss and phase constant of the proposed CPW are 0.619dB/mm and 2.574 rad/mm, respectively which result in the Quality factor (Q-factor) to be 18 at 54 GHz.

元の言語英語
ページ(範囲)1284-1289
ページ数6
ジャーナルIEICE Electronics Express
9
発行部数15
DOI
出版物ステータス出版済み - 8 24 2012

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Wave effects
Coplanar waveguides
Silicon
Dielectric losses
Metallizing
Millimeter waves
millimeter waves
transmission lines
Q factors
Electric lines
CMOS
waveguides
Substrates
dielectric loss
attenuation
silicon

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用

High-Q SWCPL for CMOS millimeter-wave technology. / Mat, D. A.A.; Pokharel, Ramesh; Sapawi, R.; Kanaya, Haruichi; Yoshida, K.

:: IEICE Electronics Express, 巻 9, 番号 15, 24.08.2012, p. 1284-1289.

研究成果: ジャーナルへの寄稿記事

Mat, D. A.A. ; Pokharel, Ramesh ; Sapawi, R. ; Kanaya, Haruichi ; Yoshida, K. / High-Q SWCPL for CMOS millimeter-wave technology. :: IEICE Electronics Express. 2012 ; 巻 9, 番号 15. pp. 1284-1289.
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