High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth

Yuki Tojo, Ryo Matsumura, Hiroyuki Yokoyama, Masashi Kurosawa, Kaoru Toko, Taizoh Sadoh, Masanobu Miyao

研究成果: Contribution to journalArticle査読

15 被引用数 (Scopus)

抄録

Laterally and vertically modulated SiGe-on-insulator (SGOI) structures are essential to integrate functional device-arrays with various energy-band-gaps and/or lattice-constants. We develop the temperature-modulated successive rapid-melting-growth (RMG) method, where Si-concentration dependent RMG processing is combined with non-destructive crystallinity-analysis. First, SGOI is formed by segregation-controlled RMG of SiGe by using Si-substrate as crystalline-seed. Polarized-Raman-scattering measurements non-destructively reveal the lateral-epitaxial-growth of SGOI with graded SiGe-concentration profiles. Second, Ge-on-insulator (GOI) is stacked on SGOI by using SGOI as crystalline-seed, where RMG temperature is selected between the melting-points of Ge and underlying SGOI. This achieves defect-free, multiply-stacked GOI on graded-SGOI structure, which demonstrates 3-dimensionally modulated SiGe-concentration profiles on Si-platform.

本文言語英語
論文番号092102
ジャーナルApplied Physics Letters
102
9
DOI
出版ステータス出版済み - 3 4 2013

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

フィンガープリント 「High-quality formation of multiply stacked SiGe-on-insulator structures by temperature-modulated successive rapid-melting-growth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル