High-quality SiC bulk single crystal growth based on simulation and experiment

S. I. Nishizawa, T. Kato, Y. Kitou, N. Oyanagi, F. Hirose, H. Yamaguchi, W. Bahng, K. Arai

研究成果: ジャーナルへの寄稿会議記事査読

21 被引用数 (Scopus)

抄録

The numerical simulation and in-situ X-ray topography were applied to observe the phenomena inside a crucible. Numerical simulation pointed out that macroscopic grown crystal quality such as grown crystal shape strongly depends on the temperature distribution inside a crucible. In-situ X-ray topography revealed that when the defects were generated, and how the defects were propagated. Most of defects were generated at the initial growth stage. It is important to control the initial stage in order to obtain a high quality SiC single crystal. Numerical simulation also suggested that it is important reduce the residual stress in a grown crystal in order to avoid the dislocation occurrence. From these results based on numerical simulation and experiment, SiC sublimation growth was controlled actively, and the large and high quality SiC single crystal have been grown.

本文言語英語
ページ(範囲)29-34
ページ数6
ジャーナルMaterials Science Forum
457-460
I
DOI
出版ステータス出版済み - 1月 1 2004
外部発表はい
イベントProceedings of the 10th International Conference on Silicon Carbide and Related Materials, ICSCRM 2003 - Lyon, フランス
継続期間: 10月 5 200310月 10 2003

!!!All Science Journal Classification (ASJC) codes

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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