High quality ZnO film formation by CO2 laser annealing of buried films in SiO2 matrix

K. Yamasaki, H. Ikenoue, T. Shimogaki, Y. Watanabe, D. Nakamura, T. Okada

研究成果: 書籍/レポート タイプへの寄稿会議への寄与

抄録

We have proposed the ZnO film annealing method using CO2 laser. We fabricated the layered structure to enhance the annealing effect. The sample structure was SiO2/ZnO/Quartz substrate. The ZnO film was deposited on quartz by a pulsed laser deposition and the SiO2 film was deposited on ZnO film by physical vapor deposition. We used photoluminescence measurement to investigate the optical property of ZnO film. We found that the optical property was improved in two steps. The first step was surface passivation effect of SiO2 coating and the second one was the annealing effect of CO2 laser. We analyzed the fabricated film for surface state by XPS and for crystallinity by TEM measurements. The change of ZnO surface state was observed when the SiO2 film was deposited on the ZnO film. The change of crystallinity of ZnO was observed after CO 2 laser annealing. The crystallinity of ZnO before laser annealing seemed to be polycrystal, while the crystallinity of ZnO after laser annealing seemed to be single crystal.

本文言語英語
ホスト出版物のタイトルLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX
出版社SPIE
ISBN(印刷版)9780819498809
DOI
出版ステータス出版済み - 1月 1 2014
イベントLaser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX - San Francisco, CA, 米国
継続期間: 2月 3 20142月 6 2014

出版物シリーズ

名前Proceedings of SPIE - The International Society for Optical Engineering
8967
ISSN(印刷版)0277-786X
ISSN(電子版)1996-756X

その他

その他Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XIX
国/地域米国
CitySan Francisco, CA
Period2/3/142/6/14

!!!All Science Journal Classification (ASJC) codes

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • コンピュータ サイエンスの応用
  • 応用数学
  • 電子工学および電気工学

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