High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition

Qingyun Sun, Peipei Zhu, Qingfang Xu, Rong Tu, Song Zhang, Ji Shi, Haiwen Li, Lianmeng Zhang, Takashi Goto, Jiasheng Yan, Shusen Li

研究成果: Contribution to journalArticle査読

12 被引用数 (Scopus)

抄録

3C-SiC (111) thick films were grown on Si (110) substrate via laser chemical vapor deposition (laser CVD) using hexamethyldisilane (HMDS) as precursor and argon (Ar) as dilution gas. The 3C-SiC (111) polycrystalline films were prepared at deposition temperature (Tdep) of 1423-1523 K, whereas the 3C-SiC (111) epitaxial films were obtained at 1573-1648 K with the thickness of 5.40 to 9.32 μm. The in-plane relationship was 3C-SiC [-1-12]//Si [001] and 3C-SiC [-110]//Si [-110]. The deposition rates (Rdep) were 16.2-28.0 μm/h, which are 2 to 100 times higher than that of 3C-SiC (111) epi-grown on Si (111) by conventional CVD. The growth mechanism of 3C-SiC (111) epitaxial films has also been proposed.

本文言語英語
ページ(範囲)1048-1057
ページ数10
ジャーナルJournal of the American Ceramic Society
101
3
DOI
出版ステータス出版済み - 3 2018

All Science Journal Classification (ASJC) codes

  • セラミックおよび複合材料
  • 材料化学

フィンガープリント

「High-speed heteroepitaxial growth of 3C-SiC (111) thick films on Si (110) by laser chemical vapor deposition」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル