High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors with recessed-gate enhanced-barrier structures

Narihiko Maeda, Masanobu Hiroki, Satoshi Sasaki, Yuichi Harada

研究成果: ジャーナルへの寄稿記事

9 引用 (Scopus)

抄録

High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed-gate enhanced-barrier structures were examined up to 300 °C, where a high threshold voltage (V th) of +3.0 V and a high drain current density (I d) of 610mA/mm were obtained at room temperature (RT). Interestingly, Id did not degrade significantly up to 300 °C with a small positive shift in Vth from +3.0 to +3.5 V. A model has been proposed that channel electrons should experience a potential step when they pass the nonrecessed/recessed boundary region in recessed-gate structures, which should be related to the observed high-temperature characteristics.

元の言語英語
記事番号084201
ジャーナルApplied Physics Express
5
発行部数8
DOI
出版物ステータス出版済み - 8 1 2012

Fingerprint

High electron mobility transistors
field effect transistors
threshold voltage
high current
high voltages
Drain current
current density
Threshold voltage
Temperature
shift
room temperature
Current density
electrons
Electrons

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors with recessed-gate enhanced-barrier structures. / Maeda, Narihiko; Hiroki, Masanobu; Sasaki, Satoshi; Harada, Yuichi.

:: Applied Physics Express, 巻 5, 番号 8, 084201, 01.08.2012.

研究成果: ジャーナルへの寄稿記事

@article{51b68bd4248c4126b7323e9e407c4b07,
title = "High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors with recessed-gate enhanced-barrier structures",
abstract = "High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed-gate enhanced-barrier structures were examined up to 300 °C, where a high threshold voltage (V th) of +3.0 V and a high drain current density (I d) of 610mA/mm were obtained at room temperature (RT). Interestingly, Id did not degrade significantly up to 300 °C with a small positive shift in Vth from +3.0 to +3.5 V. A model has been proposed that channel electrons should experience a potential step when they pass the nonrecessed/recessed boundary region in recessed-gate structures, which should be related to the observed high-temperature characteristics.",
author = "Narihiko Maeda and Masanobu Hiroki and Satoshi Sasaki and Yuichi Harada",
year = "2012",
month = "8",
day = "1",
doi = "10.1143/APEX.5.084201",
language = "English",
volume = "5",
journal = "Applied Physics Express",
issn = "1882-0778",
publisher = "Japan Society of Applied Physics",
number = "8",

}

TY - JOUR

T1 - High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors with recessed-gate enhanced-barrier structures

AU - Maeda, Narihiko

AU - Hiroki, Masanobu

AU - Sasaki, Satoshi

AU - Harada, Yuichi

PY - 2012/8/1

Y1 - 2012/8/1

N2 - High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed-gate enhanced-barrier structures were examined up to 300 °C, where a high threshold voltage (V th) of +3.0 V and a high drain current density (I d) of 610mA/mm were obtained at room temperature (RT). Interestingly, Id did not degrade significantly up to 300 °C with a small positive shift in Vth from +3.0 to +3.5 V. A model has been proposed that channel electrons should experience a potential step when they pass the nonrecessed/recessed boundary region in recessed-gate structures, which should be related to the observed high-temperature characteristics.

AB - High-temperature characteristics in normally off AlGaN/GaN heterostructure field-effect transistors (HFETs) with recessed-gate enhanced-barrier structures were examined up to 300 °C, where a high threshold voltage (V th) of +3.0 V and a high drain current density (I d) of 610mA/mm were obtained at room temperature (RT). Interestingly, Id did not degrade significantly up to 300 °C with a small positive shift in Vth from +3.0 to +3.5 V. A model has been proposed that channel electrons should experience a potential step when they pass the nonrecessed/recessed boundary region in recessed-gate structures, which should be related to the observed high-temperature characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84865332367&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84865332367&partnerID=8YFLogxK

U2 - 10.1143/APEX.5.084201

DO - 10.1143/APEX.5.084201

M3 - Article

AN - SCOPUS:84865332367

VL - 5

JO - Applied Physics Express

JF - Applied Physics Express

SN - 1882-0778

IS - 8

M1 - 084201

ER -